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Lift machine
A lift machine comprises a base, a support for supporting a load above the base, a lift actuator operatively connected between the base and the support for raising and lowering the support relative to the base, and a support stabilization mechanism operatively connected between the base and the support for stabilizing the support relative to the base during raising and lowering of the support by the lift actuator. The support stabilization mechanism comprises a pair of opposed linkages, with each of the pair of opposed linkages having a lower torque tube link and an upper torque tube link. The lower torque tube link has a torque tube operatively pivoted to the base. The upper torque tube link has a torque tube operatively pivoted to the support. The pair of opposed linkages are interconnected in such a manner that the pair moves in synchronization during raising and lowering of the support by the lift actuator and maintains the support substantially level even in the event that the center of mass of the load is offset from a vertical axis of the lift actuator.
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| Lift+machine |
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Nitride semiconductor light emitting device
A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.
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| Nitride+semiconductor+light+emitting+device |
Coupling device for two connecting poles
A coupling device for two connecting poles which includes: a lower fixing sleeve sleeved on the upper portion of a lower connecting pole, having an opening communicating the outer surface and the inner surface of the lower fixing sleeve, two fixed plates extend outwards from the edge of the opening; an upper fixing sleeve having a through gap, two fixing plates extend outwards from the gap, the fixing plates of the upper fixing sleeve are disposed within the lower fixing sleeve, the fixing plates including releasing portions and locking portions; a controlling member rotatably connected to the lower fixing sleeve, including a central portion and two side portions, the inner side surfaces of the two side portions contacting the outer side surfaces of the two releasing portions.
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| Coupling+device+for+two+connecting+poles |
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Deployable receptacle
A deployable receptacle includes a tray for supporting an object thereon and being movable between a storing position and a deploying position. The tray stores an object thereon when the tray is disposed in the storing position and deploys the object therefrom when the tray is disposed in the deploying position. A lever is coupled to the tray for moving the tray between the storing position and the deploying position.
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| Deployable+receptacle |
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